[20a-F210-1~6] 15.2 II-VI and related compounds

[20a-F210-4] Gamma-ray irradiation effects of CdTe/CdS photodiode for radiation tolerant FEA image sensor

〇Tamotsu Okamoto¹, Tomoya Igari¹, Takahiro Fukui¹, Yasuhito Gotoh², Nobuhiro Sato², Masafumi Akiyoshi³, Ikuji Takagi² (1.NIT, Kisarazu Coll., 2.Kyoto Univ., 3.Osaka Pref. Univ.)

Keywords:II-VI semiconductor, CdTe, field emitter array

We proposed a compact image sensor that uses a combination of a matrix-driven Spindt-type field emitter array (FEA) and a CdTe-based photoconducting film. In this work, we investigated I-Vcharacteristics of CdTe/CdS photodiode with CdTe thickness of approximately 2 micrometer for radiation tolerant FEA image sensor under gamma-ray irradiation. The increase rate in current did not increase with increasing the reverse bias voltage and was smaller than that with CdTe thickness of approximately 6 micrometer. Therefore, we confirmed that the current induced by gamma-ray decreased with decreasing CdTe thickness.