Silver photodiffusion into Ge chalcogenide - chalcogenide thickness dependence on the reaction rate

Yoshifumi Sakaguchi; Hidehito Asaoka; Maria Mitkova

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-G203-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Tue. Mar 20, 2018 9:00 AM - 11:45 AM G203 (63-203)

Tsuyoshi Honma(Nagaoka Univ. of Tech.), Tamihiro Gotoh(Gunma Univ.)

9:00 AM - 9:15 AM

[20a-G203-1] Silver photodiffusion into Ge chalcogenide - chalcogenide thickness dependence on the reaction rate

〇Yoshifumi Sakaguchi¹, Hidehito Asaoka², Maria Mitkova³ (1.CROSS, 2.ASRC JAEA, 3.BSU (U.S.A.))

Keywords:amorphous semiconductors, Silver photodiffusion

In the oral presentation, we report on the result of time-resolved neutron reflectivity measurment of Ag/ Ge₄₀S₆₀/ Si substrate films. We compare the results of two films with different chalcogenide thickness, and discuss anomalous chalcogenide layer thickness dependence on the reaction rate.