[20a-G203-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [20a-G203-4] Frequency multiplier based on a Ge-Sb-Te thin film

〇Ryoka Kondo¹, Naoki Shikakura¹, Tatsuya Kanehira¹, Shigeo Kawasaki², Hitoshi Hayashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.JAXA)

Keywords:Ge-Sb-Te, RFdevice

We have succeeded in fabrication of a frequency multiplier that requries no bias voltage, based on a Ge-Sb-Te thin film. The device shows a characteristic nonlinear I-V in the DC voltage range from -0.5V to 0.5V. In our RF measurement, the RF input was set to 100MHz and 0 dBm. The device outputted 12th harmonic (1.2GHz). The dependence of the output power of harmonics on the input power have demonstrated the output of the14th harmonic for 10 dBm input power, and higher output of the 3rd harmonic than the 2nd.