[20a-P9-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

[20a-P9-11] Effect of Temperature on Shunt Resistance of PV Modules during Potential Induced Degradation Recovery Test

〇Kiyoshirou Takada¹, Htay Win¹, Yudai Kawaguchi¹, Aster Rahayu¹, Fumitaka Ohashi¹, Hiroki Yoshida¹, Atsushi Masuda², Shuichi Nonomura¹ (1.Gifu Univ., 2.AIST)

Keywords:PID, recovery test

Potential induced degradation (PID) has attracted much attention in recent years since it brings drastic decreasing in output power of photovoltaic (PV) modules. The recovery process of PID of PV modules by applying the reversed bias voltage has been widely discussed. Recently, we developed a technique to induce the PID recovery by applying a reverse bias square pulse to the PV modules. In this study, we investigated the effect of temperature on the shunt resistance of PV modules during PID recovery test.