[20a-P9-1~12] 16.3 シリコン系太陽電池

[20a-P9-11] PID回復試験中の温度変化が太陽電池モジュールのシャント抵抗に与える影響

〇高田 清志郎¹、テイ ウィン¹、川口 雄大¹、ラハユ アスター¹、大橋 史隆¹、吉田 弘樹¹、増田 淳²、野々村 修一¹ (1.岐大工、2.産総研)

キーワード：PID、回復試験

Potential induced degradation (PID) has attracted much attention in recent years since it brings drastic decreasing in output power of photovoltaic (PV) modules. The recovery process of PID of PV modules by applying the reversed bias voltage has been widely discussed. Recently, we developed a technique to induce the PID recovery by applying a reverse bias square pulse to the PV modules. In this study, we investigated the effect of temperature on the shunt resistance of PV modules during PID recovery test.