[20p-A304-1~12] 2.2 Detection systems

[20p-A304-2] Heavy ion monitor as an application of oxide semiconductors

〇Hiroaki Miyoshi^1,2,3, Akihiro Koyama³, Yutaka Otaka³, Kenji Shimazoe³, Genki Hirumi^4,5, Munetaka Nitta^4,5, Fumihiko Nisikido⁵, Taiga Yamaya⁵, Takao Onoye¹, Hiroyuki Takahashi³ (1.Osaka Univ., 2.SHARP Corp., 3.Univ Tokyo, 4.Chiba Univ., 5.NIRS)

Keywords:oxide semiconductor, heavy ion

We fabricated a detector with a photodiode and an oxide semiconductor formed by using a technology to deposit a semiconductor on glass.
Indium Gallium Zinc Oxide has lower leakage current and higher mobility than amorphous silicon semiconductor.
We confirmed experimentally how Bragg Curve is affected by installing the detector in the beam using a reference monitor in water.