[20p-A304-1~12] 2.2 Detection systems

[20p-A304-4] Recent Progress in Development of Radiation Pixel Sensor Using SOI Technology II

〇TOSHINOBU MIYOSHI¹, Yasuo Arai¹, Ryutaro Nishimura² (1.KEK IPNS, 2.SOKENDAI)

Keywords:SOI, pixel sensor

Radiation pixel sensor has been developed using SOI technology in KEK SOIPIX group. The thick SOI substrate is used for a sensor and the thin SOI layer is used for a circuit. Metal bumps are not used to connect the sensor to the circuit and therefore a small pixel sensor with high gain can be developed. We introduced double SOI wafers to fabricate SOI sensors. As a result, radiation hardness was improved and a crosstalk between the sensor and the circuit was also reduced. We present recent progress in this development.