[20p-B301-1~13] 7.1 X-ray technologies

[20p-B301-9] Stochastic modeling of resists in EUV lithography

〇Akira Sasaki¹, Ishino Masahiko¹, Nishikino Masaharu¹, Maekawa Yasunari¹ (1.QST)

Keywords:EUV lithography, photoresist, percolation

We present a simulation study of the sensitivity and resultion of the EUV resists. In the case of EUV lithography, radiation chemistry by secondly electrons produced by EUV emission is expected to have significant effects in the process of exposure of resists. We use the percolation model, in which connections between exposed resist molecules produce the pattern, to investigate the threshold dose and LWR (line width roughness) of resists.