[20p-C202-1~7] 17.3 Layered materials

[20p-C202-7] Observation of dc-bias-dependent carrier distribution on an exfoliated WSe₂/SiO₂ using scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Toshiaki Kato², Toshiro Kaneko², Yasuo Cho¹ (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ.)

Keywords:layered material, scanning nonlinear dielectric microscopy, transition metal diechalcogenide

We imaged dominant carrrier distribution of a few-layer WSe₂ exfoliated on SiO₂ by using scanning nonlinear dielectric microscopy (SNDM). SNDM images show that dominant carrier type and carrier density depend on applied dc-bias and layer-number. In addition, we observed temporal changes of image contrast probably due to interface charges induced by dc-bias.