Effects of Low-Temperature Wet Oxidation on V<sub>FB</sub> Stability of SiC MOS Capacitors under Bias Stressing

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

1:45 PM - 2:00 PM

〇(B)Jun Koyanagi¹, Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:threshold voltage, stability, MOS