[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-D103-7] Experimental Evaluation of Electron Scattering Mechanisms in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

Keywords:SiC, inversion layer, Hall Effect measurement

Conventionally, electron scattering in SiC MOS inversion layer has been evaluated by using analytical formulae or fitting mobility models implemented into TCAD. In this study, Coulomb scattering was supressed by intentionally lowering p-type acceptor concentration down to the lowest value ever reported. This approach enabled us to apparenetly observe phonon-limited mobility and experimentally elavuate electron scattering in SiC MOS inversion layer.