15:45 〜 16:00
▲ [20p-D104-11] STM/STS study of electronic states on (001) surface of InAs/GaSb SL system
キーワード：Scanning probe microscopy, Topological Insulator
On the 2D-Topological Insulator(TI) InAs/GaSb QW system, the real space imaging of the edge states is still missing. Although we have measured electronic states on a (110) cleaved surface by STM/STS technique so far, it is impossible in principle by this method to evaluate the spatial locality of the edge states. We are now challenging to measure the spatial locality of the edge states with STM/STS from a (001) surface. In the presentation, we will discuss the local density of states at the region close to the cleaved sample edge.