The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Takayoshi Oshima(Saga Univ.), Takeyoshi Onuma(Kogakuin Univ.)

1:00 PM - 1:15 PM

[20p-E201-1] Intensity Changes of Blue Luminescence in N-doped β-Ga2O3 Epitaxial Films

Takeyoshi Onuma1,2, Yoshiaki Nakata2, Kohei Sasaki3,2, Tatekazu Masui3, Tomohiro Yamaguchi1, Tohru Honda1, Akito Kuramata3, Shigenobu Yamakoshi3, Masataka Higashiwaki2 (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

Keywords:Gallium Oxide, optical property, N dope

Cathodoluminescecne spectra of N-doped β-Ga2O3 epitaxial films are shown to investigate their electronic structure and defect states.