[20p-F214-1~9] 15.5 IV族結晶，IV-IV族混晶

▼ [20p-F214-7] Growth of Au/Sn-catalyzed Ge_1-xSn_x nanowires with high Sn content (~5 at.%)

〇Yonglie Sun^1,2、Ryo Matsumura¹、Wipakorn Jevasuwan¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. Tsukuba)

キーワード：germanium tin, nanowire, vapor-liquid-solid (VLS) growth

GeSn alloy nanowires can be applied to novel electronics and optical devices due to their high carrier mobility and the potential to achieve a direct band gap transition. Here, we present a way to fabricate GeSn nanowires with a Sn incorporation up to 5 at.%, achieved by vapor-liquid-solid growth using Au/Sn catalysts. Energy-dispersive X-ray (EDX) spectroscopy and Raman measurement suggest that the Sn inside nanowires is uniform distributed and substitutional.