[20p-P6-1~29] 15.4 III-V-group nitride crystals

△ [20p-P6-1] Reduction of Li impurity in the GaN wafer fabricated using the sapphire dissolution technique in the Na-flux growth by regrowth in the flux without Li

〇(D)Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Murakami¹, Kosuke Nakamura¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

Keywords:Na-flux method, Gallium Nitride