The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-P6-1~29] 15.4 III-V-group nitride crystals

Tue. Mar 20, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

[20p-P6-10] GaN Growth on Isotropic Graphite

Takashi Inoue1, Go Sajiki2, Toshihiro Hosokawa1, Tomoyuki Okuni1, Hiroshi Okano2 (1.Toyo Tanso Co., Ltd., 2.NIT, Kagawa College)

Keywords:GaN, Isotropic graphite, Rocking curve measurement

There are random oriented hexagon network of graphite (002 plane) on the surface of isotropic graphite. The random oriented structure of 002 planes are quite different from sapphire substrate. We expect to get interesting and distinctive GaN sample, use isotropic graphite as substrate for GaN growth.
GaN crystal growth were confirmed by XRD and PL. We will show rocking curves along 002 plane and other analyses of GaN on isotropic graphite, and discuss the feature of the sample.