[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-26] Investigation of NiO/Al_xGa_1-xN/n-GaN photoanodes for high-efficient solar water splitting

Marina Ono¹, Yuya Uzumaki², Yoko Ono², Takeshi Komatsu², 〇Kazuhide Kumakura¹ (1.NTT BRL, 2.NTT DTL)

Keywords:solar water splitting, nitride-based semiconductors

For solar water splitting, nitride-based semiconductors are promising materials as the photoabsorption layer of the photoanodes. For the high-efficient energy conversion, we have investigated the formation method of the NiO co-catalyst and the rate-determining step of the reaction. Here, we report on the stability and the amount of the H₂ and O₂ generation in the various photoanode structures.