[20p-P6-1~29] 15.4 III-V族窒化物結晶

▲ [20p-P6-28] EBIC Investigation of Dislocations and Leakage Sites in GaN Schottky Diode

〇JUN CHEN¹、WEI YI¹、TAKASHI SEKIGUCHI¹、TOSHIHIDE NABATAME¹、MASAHARU EDO² (1.NIMS、2.Fuji Electric)

キーワード：GaN, EBIC, Dislocation

GaN-based wide band gap semiconductors are promising for the applications in high electron mobility transistors and power devices. The performance and reliability of devices strongly depend on the material quality and the fabrication process. Dislocation is one of the major defects in GaN. However, the electrical activity of dislocations in GaN devices has not been well understood. In this study, we attempted to investigate the electrical properties of dislocations in GaN Schottky diodes by using electron-beam-induced current technique.