[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-29] Luminescence Properties of Praseodymium in Gallium Nitride Semiconductor Implanted at Elevated Temperature

〇Shinichiro Sato¹, Manato Deki², Tohru Nakamura³, Takeshi Ohshima¹ (1.QST, 2.Nagoya Univ., 3.Hosei Univ.)

Keywords:Gallium Nitride, Ion Implantation, Defect Formation

Since isolated Praseodymium (Pr) ions in gallium nitride semiconductors (GaN) are expected to be utilized for solid-state qubits and single photon sources, we investigate the optimum condition of fabrication processes toward realization of single photon emissions from single Pr ions. In this study, we investigated Pr ion implantation into GaN at elevated temperature up to 1200 ^oC and the subsequent rapid thermal annealing. Formation of defect clusters in addition to recovery of radiation induced defects are discussed.