[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-3] Spectroscopic ellipsometry characterization of p-GaN exposed by N₂ plasma under quasi-atmospheric pressure

〇Naoto Kumagai^1,3, Hirotomo Itagaki², Jaeho Kim³, Hisato Ogiso², Xue-lun Wang^1,3, Shingo Hirose², Hajime Sakakita^3,1 (1.GaN-OIL, AIST, 2.AMRI, AIST, 3.ESPRIT, AIST)

Keywords:Nitride semiconductor, Spectrosopic ellipsometry, plasma exposure