[20p-P6-1~29] 15.4 III-V-group nitride crystals

[20p-P6-4] Evaluation of ion implantation damage in GaN using two-wavelength excited photoluminescence

〇Kaito Masuda¹, Hiroto Sekiguchi¹, Kiyomasa Miwa¹, Hiroshi Okada¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi University of Technology)

Keywords:GaN, two-wavelength excited photoluminescence