Ryota Ochi

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

4:45 PM - 5:00 PM

△ [18p-N302-14] Interface control of Al₂O₃/AlGaN/GaN structures for MOS-HEMT application

〇Ryota Ochi¹, Yuji Ando¹, Shota Kaneki¹, Tamotsu Hashizume¹ (1.RCIQE, Hokkaido Univ.)