Junichi Hattori

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:45 PM - 4:45 PM E303 (E303)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

4:15 PM - 4:30 PM

[18p-E303-10] TCAD Simulation of Phonon Thermal Transport in MOSFETs on the Basis of Boltzmann Equation

〇Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹ (1.AIST)