4:45 PM - 5:00 PM [20p-E311-12] Expansion of Shockley Stacking Faults in 4H-SiC Epitaxial Layer by Forward Bias Current or Ultraviolet Irradiation 〇Kazumi Takano1, Yoshihiko Ohsaki1, Yasuyuki Igarashi1 (1.ITES)