[18a-E310-1~10] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM

△ [18a-E310-2] Characterization of UV-B AlGaN active layer on n-Al_0.6Ga_0.4N underlying layer with low dislocation density

〇(M1)Shunya Tanaka¹, Yuta Kawase¹, Kosuke Sato^1,2, Shinji Yasue¹, Shohei Teramura¹, Sho Iwayama^1,4, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hideto Miyake⁴ (1.Fac. Sci & Tec., Meijo Univ., 2.Asahi-Kasei Corp., 3.Akasaki Research Center, Nagoya Univ., 4.Graduate School of Regional Innovation Studies, Mie Univ.)

Shunya Tanaka

Speaker, Author, Co-Author

[18a-E310-1~10] 15.4 III-V-group nitride crystals

△ [18a-E310-2] Characterization of UV-B AlGaN active layer on n-Al0.6Ga0.4N underlying layer with low dislocation density

△ [18a-E310-2] Characterization of UV-B AlGaN active layer on n-Al_0.6Ga_0.4N underlying layer with low dislocation density