Takuji Hosoi

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

11:15 AM - 11:30 AM

[20a-E311-9] Improved V_th stability of SiC MOSFET by post-nitridation CO₂ annealing

〇Takuji Hosoi¹, Momoe Ohsako¹, Koji Ito², Takayoshi Shimura¹, Tsunenobu Kimoto², Heiji Watanabe¹ (1.Osaka Univ., 2.Kyoto Univ.)