Taisuke Fujisawa

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 1:30 PM - 3:45 PM E313 (E313)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[19p-E313-1~9] 15.5 Group IV crystals and alloys

3:30 PM - 3:45 PM

△ [19p-E313-9] Dependence of field effect mobility of strained Si/relaxed SiGe/Si(110) p-MOSFET on strained Si layer thickness

〇(B)Taisuke Fujisawa¹, Astushi Onogawa¹, Daichi Namiuchi¹, Shingo Saito¹, Yuichi Sano¹, Daisuke Izumi¹, Junji Yamanaka¹, Kosuke Hara¹, Kentaro Sawano², Kiyokazu Nakagawa¹, Keisuke Arimoto¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

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