Masafumi Hirose

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Oral presentation
| Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM

[21p-B31-14] Change of the electrical properties as a function of annealing temperarure for
Pt/Al₂O₃/β-Ga₂O₃ MOS capacitors

〇(M1)Masafumi Hirose^1,2, Toshihide Nabatame², Erika Maeda^1,2, Akihiko Ohi², Naoki Ikeda², Yoshihiro Irokawa², Hideo Iwai², Hideyuki Yasufuku², Satoshi Kawada², Makoto takahashi³, Kazuhiro Ito³, Yasuo Koide², Hajime Kiyono¹ (1.SIT, 2.NIMS, 3.Joining and Welding Research Institute, Osaka University)