Session information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2019 9:00 AM - 11:30 AM B31 (B31)

Hiroyuki Yaguchi(Saitama Univ.), Yoriko Tominaga(Hiroshima Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-B31-1] Photoluminescence mechanism in Si doped GaAsN as a function of Si impurity concentration

〇Takashi Tsukasaki¹, Ren Hiyoshi¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

9:15 AM - 9:30 AM

△ [18a-B31-2] First-Principles Calculation of Bonding States between Nitrogen - Group IV Dopant in Dilute GaPN alloy

〇Yuito Maki¹, Yamane Keisuke¹, Wakahara Akihiro¹ (1.Toyohashi Tech.)

9:30 AM - 9:45 AM

[18a-B31-3] Changes in crystal defects with nitrogen incorporation in GaNAs nanowires

〇Ryo Fujiwara¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

9:45 AM - 10:00 AM

[18a-B31-4] Structural analysis of GaAs based core multi-shell nanowires by X-ray diffraction

〇Takaya Mita¹, Ryo Fujiwara¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

10:15 AM - 10:30 AM

▲ [18a-B31-5] Laser Induced Degradation of Photoluminescence Intensity in GaPN

〇(D)Md Zamil Sultan^1,2, Akinori Shiroma¹, Shuhei Yagi¹, Kengo Takamiya¹, Hiroyuki Yaguchi¹ (1.Saitama University, 2.Hajee Mohammad Danesh Science and Technology University)

10:30 AM - 10:45 AM

[18a-B31-6] Electrical characterization of InGaAs:N δ-doped superlattices

〇Ryuji Yoneno¹, Naoya Miyashita², Yoshitaka Okada², Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.RCAST, The Univ. of Tokyo)

10:45 AM - 11:00 AM

[18a-B31-7] Biexciton luminescence from individual isoelectronic traps in N -doped GaAs grown on (111) substrates

〇Shouhei Takaoka¹, Kengo Takamiya¹, Shuhei Yagi¹, Yuji Hazama², Hidefumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.ISSP,Tokyo Univ.)

11:00 AM - 11:15 AM

[18a-B31-8] As flux dependence of GaAsBi / GaAs quantum wells on (100) GaAs substrates

〇Takumi Yamamoto¹, Patil Pallavi¹, Satoshi Shimomura¹ (1.Ehime Univ.)

11:15 AM - 11:30 AM

[18a-B31-9] Photoluminescence from GaAsBi/GaAs MQW on (221)A and B GaAs substrates

〇Ayaka Shimizu¹, Yamamoto Takumi¹, Kannbara Homare¹, Shimomura Satoshi¹ (1.Ehime Univ.)

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