[19a-E313-1~10] 15.5 Group IV crystals and alloys

Thu. Sep 19, 2019 9:30 AM - 12:00 PM E313 (E313)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[19a-E313-1] [Young Scientist Presentation Award Speech] Multilayer graphene synthesis by metal-induced layer exchange and its application for thin film rechargeable battery

〇Yoshiki Nakajima¹, Hiromasa Murata¹, Yuya Kado², Noriko Yoshizawa², Ryo Matsumura³, Naoki Fukata^1,3, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

9:45 AM - 10:00 AM

[19a-E313-2] Modulation effects of Au crystallinity on low temperature SPC of a-Ge/Au/SiO₂

〇Kazuaki Sumi¹, Noboru Shimizu¹, Isao Tsunoda¹ (1.NIT Kumamoto Col.)

10:00 AM - 10:15 AM

[19a-E313-3] Evaluation of low temperature GILC for electron irradiated a-Ge on SiO₂

〇Satoshi Shimizu¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT, Kumamoto College)

10:15 AM - 10:30 AM

△ [19a-E313-4] Electron-beam-induced crystallization of amorphous GeSn

〇Ryo Motomura¹, Kohei Inenaga¹, Manabu Ishimaru¹, Masayuki Okugawa², Ryusuke Nakamura² (1.Kyusyu Inst. Technol., 2.Osaka Pref. Univ.)

10:30 AM - 10:45 AM

[19a-E313-5] Evaluation of low temperature Sn induced lateral crystallized GeSn on inslator

〇Daisuke Ogawa¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT, Kumamoto College)

10:45 AM - 11:00 AM

[19a-E313-6] Evaluation of electric properties of Ge_1−xSn_x on insulators prepared by segregation controlled rapid-melting growth

〇Takaya Nakao¹, Taiki Nishijima², Satoshi Shimizu², Isao Tsunoda², Osamu Nakatsuka^1,3, Masashi Kurosawa^1,4 (1.Grad. Sch. of Eng., Nagoya Univ., 2.NIT, Kumamoto College, 3.IMaSS, Nagoya Univ., 4.IAR, Nagoya Univ.)

11:00 AM - 11:15 AM

[19a-E313-7] TFT operation of solid-phase crystallized Ge thin films and investigation of Sn doping effects

〇Kenta Moto^1,2, Keisuke Yamamoto³, Toshifumi Imajo^1,2, Takashi Suemasu¹, Hiroshi Nakashima⁴, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow, 3.IGSES, Kyushu Univ., 4.GIC, Kyushu Univ.)

11:15 AM - 11:30 AM

[19a-E313-8] Fabrication of Ge PN junction on ferromagnetic Fe₃Si

〇Mizuki Honda¹, Takahiro Shihara¹, Kohei Hamya^1,2, Michihiro Yamada¹, Shinya Yamada^1,2 (1.Osaka Univ., 2.CSRN, Osaka Univ.)

11:30 AM - 11:45 AM

[19a-E313-9] Formation of laterally content-graded n-type Si₁₋_xGe_x wires using ion implantation

〇Masaya Nakata¹, Taiki Nishijima², Satoshi Shimizu², Isao Tsunoda², Motohiro Tomita³, Takanobu Watanabe³, Osamu Nakatsuka^1,4, Masashi Kurosawa^1,5 (1.Grad. Sch. of Eng., Nagoya Univ., 2.NIT, Kumamoto College, 3.Waseda Univ., 4.IMaSS, Nagoya Univ., 5.IAR, Nagoya Univ.)

11:45 AM - 12:00 PM

[19a-E313-10] Enhancement of Photoluminescence Intensity of Ge_1−xSn_x by Heavily Sb Doping

〇Masahiro Fukuda¹, Jihee Jeon¹, Mitsuo Sakashita¹, Shigehisa Shibayama¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

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