Session information

Oral presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[19p-E307-1~15] 9.4 Thermoelectric conversion

Thu. Sep 19, 2019 1:15 PM - 5:30 PM E307 (E307)

Kei Hayashi(Tohoku Univ.), Atsuko Kosuga(Osaka Pref. Univ.), Takashi Komine(Ibaraki Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[19p-E307-1] Improvement of Thermoelectric Performance of Bilayer Graphene by Using Vertical Electric Field

〇(D)Hikaru Horii¹, Kenji Sasaoka², Takahiro Yamamoto^1,2, Hidetoshi Fukuyama³ (1.Fac. of Eng., Tokyo Univ. of Sci., 2.RIST, Tokyo Univ. of Sci., 3.Tokyo Univ. of Sci.)

1:30 PM - 1:45 PM

[19p-E307-2] Thermoelectric properties Si/CrSi₂ composite with naturally decorated dislocations

〇Yuji Ohishi¹, Daiki Ebata¹, Hiroaki Muta¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[19p-E307-3] Thermo- and Galvano-magnetic effects of 400-nm-diameter Bi nanowire

〇Masayuki Murata¹, Heisuke Tomioka^1,2, Kayo Aoyama¹, Atsushi Yamamoto¹, Yasuhiro Hasegawa², Takashi Komine³ (1.AIST, 2.Saitama Univ., 3.Ibaraki Univ.)

2:00 PM - 2:15 PM

[19p-E307-4] Compressive-stress-induced quantum effect in Bi nanowires

〇Takashi Komine¹, Tomosuke Aono¹, Masayuki Murata², Yasuhiro Hasegawa³ (1.Ibaraki University, 2.AIST, 3.Saitama University)

2:15 PM - 2:30 PM

▼ [19p-E307-5] Thermal stability analysis and thermoelectric properties of supersaturated solid-solution of Silicon-Germanium-Phosphorous

〇(PC)Swapnil Chetan Ghodke¹, Muthusamy Omprakash¹, Kevin Delime Codrin¹, Masahiro Adachi³, Yoshiyuki Yamamoto³, Tsunehiro Takeuchi^1,2 (1.Toyota Technological Institute, 2.PRESTO, Japan Science and Technology Agency, 3.Sumitomo Electric Industries)

2:45 PM - 3:00 PM

[19p-E307-6] Controlling thermoelectric properties of epitaxial CaSi₂ films by modulating Ca concentration

〇(D)Tsukasa Terada¹, Yuto Uematsu¹, Takafumi Ishibe¹, Eiichi Kobayashi², Yuichiro Yamashita³, Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Kyushu Synchrotron Light Research Center, 3.AIST)

3:00 PM - 3:15 PM

[19p-E307-7] Improvement of thermoelectric properties in Si films including nanocrystals by controlling defects

〇(DC)Shunya Sakane¹, Takafumi Ishibe¹, Nobuyasu Naruse², Yutaka Mera², Md. Mahfuz Alam³, Kentarou Sawano³, Yoshiaki Nakamura¹ (1.Osaka univ., 2.Shiga Univ. Med. Sci., 3.Tokyo City Univ.)

3:15 PM - 3:30 PM

△ [19p-E307-8] Thermoelectric properties and microstructures of Mg₂Sn single crystals

〇(DC)Wataru Saito¹, Kei Hayashi¹, Yuzuru Miyazaki¹ (1.Tohoku Univ.)

3:30 PM - 3:45 PM

[19p-E307-9] [Young Scientist Presentation Award Speech] Single crystal growth of multinary thermal energy conversion materials

〇Akira Nagaoka¹, Kenji Yoshino¹, Taizo Masuda², Michael Scarpulla³, Kensuke Nishioka¹ (1.Univ. of Miyazaki, 2.Toyota Motor Corporation, 3.Univ. of Utah)

4:00 PM - 4:15 PM

▼ [19p-E307-10] Improvement of thermoelectric properties of Ag₂S by Se substitution

〇(P)Saurabh Singh¹, Keisuke Hirata¹, Dogyun Byeon¹, Swapnil Ghodke¹, Masaharu Matsunami¹, Masahiro Adachi², Yoshiyuki Yamamoto², Tsunehiro Takeuchi¹ (1.Toyota Tech. Inst., 2.Sumitomo Elect. Ind.)

4:15 PM - 4:30 PM

[19p-E307-11] Low-temperature MBE growth of thermoelectric Fe₂TiSi epitaxial films

〇Yuta Shimanuki¹, Kohei Kudo¹, Shinya Yamada^1,2, Takafumi Ishibe¹, Yoshiaki Nakamura¹, Kohei Hamaya^1,2 (1.Osaka Univ., 2.Osaka Univ. CSRN)

4:30 PM - 4:45 PM

△ [19p-E307-12] Flexible thermoelectric p- and n-type Si_1-xGe_x formed by Zn-induced layer exchange

〇Mikie Tsuji¹, Takashi Suemasu¹, Kaoru Toko^1,2 (1.Univ. of Tsukuba, 2.JST PRESTO)

4:45 PM - 5:00 PM

△ [19p-E307-13] TEM observations of SnSe thin films fabricated by pulse-laser deposition

〇Yoshiki Hirayama¹, Manabu Ishimaru¹, Kaname Matsumoto¹, Tomoya Horide¹ (1.Kyushu Inst. Technol.)

5:00 PM - 5:15 PM

[19p-E307-14] Analysis of phononic properties for tetrahedrite-type Ag₃P₆Si₃Sn₂ using STEM and DFT

〇Masanobu Miyata¹, Yi Ling Chiew¹, Yoshifumi Oshima¹, Mikio Koyano¹ (1.JAIST)

5:15 PM - 5:30 PM

▲ [19p-E307-15] Interface engineering to enhance the thermoelectric properties of solution-processed thin film

〇Ajay Kumar Baranwal¹, Shrikant Saini², Daisuke Hirotani³, Tomohide Yabuki², Satoshi Iikubo³, Koji Miyazaki², Shuzi Hayase¹ (1.Univ. Electro-Commu, 2.Kyushu Inst. Tech., 3.Kyu. Inst. Tech.)

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