Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-E310-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 1:15 PM - 7:00 PM E310 (E310)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:45 PM

[19p-E310-1] [INVITED] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

〇Tomoyuki Tanikawa¹, Kazuki Ohnishi², Masaya Kanoh³, Takashi Mukai³, Takashi Matsuoka⁴ (1.Osaka Univ., 2.Nagoya Univ., 3.Nichia Corp., 4.Tohoku Univ.)

1:45 PM - 2:00 PM

[19p-E310-2] Realization of a temperature-variable omnidirectional photoluminescence spectrometer

〇Kazunobu Kojima¹, Kenichiro Ikemura², Akihiro Nakamura², Takuya Saito¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Hamamatsu Photonics K. K.)

2:00 PM - 2:15 PM

[19p-E310-3] Time-resolved photoluminescence spectroscopy for a GaN crystal by multiple-photon excitation (I)

〇Tomoyuki Tanikawa¹, Kazunobu Kojima², Takumi Kasuya², Shigefusa Chichibu², Atsushi Tanaka³, Yoshio Honda², Hiroshi Amano³, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.IMRAM, Tohoku Univ., 3.IMaSS, Nagoya Univ.)

2:15 PM - 2:30 PM

[19p-E310-4] Time-resolved photoluminescence spectroscopy for a GaN crystal by multiple-photon excitation (2)

〇Kazunobu Kojima¹, Tomoyuki Tanikawa², Takumi Kasuya¹, Masahiro Uemukai², Ryuji Katayama², Atsushi Tanaka³, Yoshio Honda³, Hiroshi Amano³, Shigefusa Chichibu^1,3 (1.IMRAM-Tohoku Univ., 2.Osaka Univ., 3.IMaSS-Nagoya Univ.)

2:30 PM - 2:45 PM

[19p-E310-5] A study of distribution of residual stress on n type GaN in contact with the Au/Ti/Cr film electrode by micro-Raman imaging in high temperatures

〇Jun Suda¹, Motoki Kawase¹, Sousuke Imai¹, Ryoga Fuji¹ (1.Chukyo Univ.)

3:00 PM - 3:15 PM

[19p-E310-6] In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate grown by PVT and a homoepitaxial film

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Kouji Hazu¹, Youichi Ishikawa¹, Kentaro Furusawa¹, Seiji Mita², Ramon Collazo³, Zlatko Sitar³, Akira Uedono⁴ (1.Tohoku Univ., 2.Adroit Materials, 3.NC State Univ., 4.Univ. of Tsukuba)

3:15 PM - 3:30 PM

[19p-E310-7] Microscopic electroluminescence measurements of deep ultraviolet AlGaN light-emitting diodes

〇Kazunobu Kojima¹, Yuki Yoshida², Masaki Shiraiwa², Yoshinari Awaji², Atsushi Kanno², Naokatsu Yamamoto², Akira Hirano³, Yosuke Nagasawa³, Masamichi Ippommatsu³, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.NICT, 3.UV craftory)

3:30 PM - 3:45 PM

[19p-E310-8] Microscopic Spectroscopy on local high energy emission around dislocations in AlGaN multiple quantum well structures

〇Jin Li¹, Fumiya Nakatani¹, Shun Hirayama¹, Satoshi Kurai¹, Hideto Miyake², Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Mie Univ.)

3:45 PM - 4:00 PM

[19p-E310-9] Analysis of efficiency curves in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons

〇Hiroyuki Miyoshi¹, Ryohei Takeda¹, Hiroki Nakao¹, Satoshi Kurai¹, Hideaki Murotani², M.Ajimal Khan³, Noritoshi Maeda³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

4:00 PM - 4:15 PM

[19p-E310-10] Analysis of efficiency curves in AlGaN-based multiple quantum wells using rate equation based on radiative and nonradiative recombination of excitons (2)

〇Hideaki Murotani¹, Hiroyuki Miyoshi², Ryohei Takeda², Hiroki Nakao², Satoshi Kurai², M. A. Khan³, Noritoshi Maeda³, Masafumi Jo³, Hideaki Hirayama³, Yoichi Yamada² (1.NIT, Tokuyama Coll., 2.Yamaguchi Univ., 3.RIKEN)

4:15 PM - 4:30 PM

[19p-E310-11] Temperature dependence of deep ultraviolet stimulated emission from AlGaN quantum well structures

〇Ryohei Tanabe¹, Keisuke Hisanaga¹, Akira Hamada¹, Kanta Beppu¹, Satoshi Kurai¹, Hideaki Murotani², Tetutoshi Maeda³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT,Tokuyama Coll., 3.RIKEN)

4:30 PM - 4:45 PM

[19p-E310-12] Dependence of internal quantum efficiency on well width and barrier Al composition in AlGaN multiple quantum well structures

〇Yuki Akamatsu¹, Atsushi Fujii¹, Satoshi Kurai¹, Hideaki Murotani², Hideto Miyake³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT,Tokuyama Coll., 3.Mie Univ.)

5:00 PM - 5:15 PM

[19p-E310-13] Fabrication of +c AlN/-c AlN Structure toward NIR Wavelength Conversion

〇Yusuke Hayashi¹, Kenjiro Uesugi², Kanako Shojiki³, Ryuji Katayama⁴, Akira Sakai¹, Hideto Miyake^3,5 (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. Eng., Mie Univ., 4.Grad. Sch. Eng., Osaka Univ., 5.Grad. Sch. RIS, Mie Univ.)

5:15 PM - 5:30 PM

△ [19p-E310-14] Demonstration of Second Harmonic Generation by Transverse Quasi-Phase-Matched AlN Waveguide

〇Asahi Yamauchi¹, Shuhei Yamaguchi¹, Takuya Onodera¹, Yusuke Hayashi², Hideto Miyake², Toshiki Hikosaka³, Shinya Nunoue³, Keishi Shiomi¹, Yasufumi Fujiwara¹, Kazunori Serita¹, Iwao Kawayama¹, Masayoshi Tonouchi¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Mie Univ., 3.Toshiba Corp.)

5:30 PM - 5:45 PM

[19p-E310-15] Design of Deep Ultraviolet Second Harmonic Generation Device with Double -layer Layer Polarity Inverted AlN Waveguide

〇Asahi Yamauchi¹, Tenta Komatsu¹, Kazuhisa Ikeda¹, Kenjiro Uesugi², Kanako shojiki², Hideto Miyake², Toshiki Hikosaka³, Shinya Nunoue³, Takaya Morikawa¹, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Mie Univ., 3.Toshiba Corp.)

5:45 PM - 6:00 PM

[19p-E310-16] Growth of group-III nitrides on glass substrates using group-IV orientation layers

〇Atsushi Kobayashi¹, Haruka Nakano¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (1.The Univ. of Tokyo, 2.JST-ACCEL)

6:00 PM - 6:15 PM

[19p-E310-17] Growth and characterization of highly Si-doped GaN (2021) epitaxial films

〇Soichiro Morikawa¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS,UTokyo, 2.JST-ACCEL)

6:15 PM - 6:30 PM

[19p-E310-18] Investigation of MgF₂ buffer for GaN on Si (111) substrate

〇Fumiya Kanbayashi¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

6:30 PM - 6:45 PM

▲ [19p-E310-19] Basic characteristics of ultrathin InN layers prepared by sputtering on various AlN templates

〇(M2)Dayeon Jeong¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (1.Institute of Industrial Scienc, The University of Tokyo, 2.JST-ACCEL)

6:45 PM - 7:00 PM

[19p-E310-20] MBE Growth of cubic aluminum boron nitride (c-AlBN)

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

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