Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Fri. Sep 20, 2019 1:45 PM - 5:15 PM E304 (E304)

Kenji Shinozaki(AIST), Tamihiro Gotoh(Gunma Univ.), Toshihiro Nakaoka(Sophia Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-E304-1] Relationship between residual stress and short-range structure in chemically strengthened glass

〇Nobuaki Terakado¹, Ryusei Sasaki¹, Shingo Ebukuro¹, Yoshihiro Takahashi¹, Takumi Fujiwara¹, Shuji Orihara², Yoshio Orihara² (1.Tohoku Univ., 2.Orihara Industrial)

2:00 PM - 2:15 PM

[20p-E304-2] Effect of R₂O₃-Substitution on Structure of ZnO-P₂O₅ Glasses

〇Hirokazu Masai¹, Yohei Onodera², Shinji Kohara³, Akitoshi Koreeda⁴, Yasuhiro Fujii⁴, Takahiro Ohkubo⁵ (1.AIST, 2.Kyoto Univ., 3.NIMS, 4.Ritsumeikan Univ., 5.Chiba Univ.)

2:15 PM - 2:30 PM

[20p-E304-3] Microscopic ordering in amorphous poly(n-alkylsilsesquioxane) liquids and solids synthesized by a cosolvent-free hydrolytic polycondensation and aging

〇Koichi Kajihara¹, Seto Ryosuke¹, Kanamura Kiyoshi¹, Onodera Yohei^2,3, Kohara Shinji³ (1.TMU, 2.Kyoto Univ., 3.NIMS)

2:30 PM - 2:45 PM

[20p-E304-4] Local structure of Nb and/or N doped TiO₂ film formed by reactive sputtering

〇Toshihiro Okajima¹, JunJun Jia², Yuzo Shigesato³ (1.SAGA-LS, 2.Waseda Univ., 3.Aoyamagakuin Univ.)

2:45 PM - 3:00 PM

▼ [20p-E304-5] Flexible Solution-processed Metal Oxide Thin Film Transistors Operated at 23 MHz Achieved by a Damage-free Patterning Process

〇(D)Xiaozhu Wei¹, Shohei Kumagai¹, Kotaro Tsuzuku², Akifumi Yamamura¹, Tatsuyuki Makita¹, Mari Sasaki¹, Shun Watanabe¹, Jun Takeya¹ (1.UTokyo., 2.Pi-crystal, Inc.)

3:15 PM - 3:30 PM

△ [20p-E304-6] Electron-beam radial distribution function analysis of amorphous boron carbide

〇Kousuke Nishikuma¹, Manabu Ishimaru¹, Ryusuke Nakamura² (1.Kyushu Inst. Technol., 2.Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[20p-E304-7] Mechanism of Crystallization of Electron-Beam-Evaporated Amorphous Si Films on Textured Glass Substrates by FLA

〇Aimi Yago¹, Keisuke Ohdaira¹ (1.JAIST)

3:45 PM - 4:00 PM

△ [20p-E304-8] Phase transition behavior in MnTe sputtering films

〇(D)Shunsuke Mori¹, Daisuke Ando¹, Yuji Sutou¹ (1.Tohoku Univ.)

4:00 PM - 4:15 PM

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr₂Ge₂Te₆ Phase Change Materials

〇(D)YI SHUANG¹, Shogo Hatayama¹, Jun Seop An², Ando Daisuke¹, Yun Heub Song², Yuji Sutou¹ (1.Tohoku Univ., 2.Hanyang Univ.)

4:15 PM - 4:30 PM

[20p-E304-10] Subgap absorption peaks in selenium films

〇Tamihiro Gotoh¹ (1.Gunma Univ.)

4:30 PM - 4:45 PM

[20p-E304-11] Photoconductivity in Amorphous Chalcogenide Films

〇Koji Hayashi¹ (1.Gifu Univ.)

4:45 PM - 5:00 PM

[20p-E304-12] Silver photodiffusion into amorphous germanium sulfide - excitation light wavelength dependence

〇Yoshifumi Sakaguchi¹, Takayasu Hanashima¹, Al-Amin Amed Simon², Maria Mitkova² (1.CROSS, 2.BSU)

5:00 PM - 5:15 PM

[20p-E304-13] Investigation of Photodoping Process in Ag/GeS₂ Double Layer Films using Neutron Beam

〇Yoshihisa Murakami¹, Takehisa Shibuya², Moriaki Wakaki², Yoshifumi Sakaguchi³ (1.Tsukuba Univ. of Tech., 2.Tokai Univ., 3.CROSS)

Session information

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20p-E304-1] Relationship between residual stress and short-range structure in chemically strengthened glass

[20p-E304-2] Effect of R₂O₃-Substitution on Structure of ZnO-P₂O₅ Glasses

[20p-E304-3] Microscopic ordering in amorphous poly(n-alkylsilsesquioxane) liquids and solids synthesized by a cosolvent-free hydrolytic polycondensation and aging

[20p-E304-4] Local structure of Nb and/or N doped TiO₂ film formed by reactive sputtering

▼ [20p-E304-5] Flexible Solution-processed Metal Oxide Thin Film Transistors Operated at 23 MHz Achieved by a Damage-free Patterning Process

△ [20p-E304-6] Electron-beam radial distribution function analysis of amorphous boron carbide

[20p-E304-7] Mechanism of Crystallization of Electron-Beam-Evaporated Amorphous Si Films on Textured Glass Substrates by FLA

△ [20p-E304-8] Phase transition behavior in MnTe sputtering films

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr₂Ge₂Te₆ Phase Change Materials

[20p-E304-10] Subgap absorption peaks in selenium films

[20p-E304-11] Photoconductivity in Amorphous Chalcogenide Films

[20p-E304-12] Silver photodiffusion into amorphous germanium sulfide - excitation light wavelength dependence

[20p-E304-13] Investigation of Photodoping Process in Ag/GeS₂ Double Layer Films using Neutron Beam

Authentication

Session information

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

▼ [20p-E304-5] Flexible Solution-processed Metal Oxide Thin Film Transistors Operated at 23 MHz Achieved by a Damage-free Patterning Process

△ [20p-E304-6] Electron-beam radial distribution function analysis of amorphous boron carbide

△ [20p-E304-8] Phase transition behavior in MnTe sputtering films

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr2Ge2Te6 Phase Change Materials

Authentication

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr₂Ge₂Te₆ Phase Change Materials