Oral presentation

[20p-E216-8~20] 10.2 Fundamental and exploratory device technologies for spin

Fri. Sep 20, 2019 3:30 PM - 7:00 PM E216 (E216)

Shinji Miwa(Univ. of Tokyo), Mikihiko Oogane(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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3:30 PM - 3:45 PM

▼ [20p-E216-8] Intrinsic Spin Decay Length in Antiferromagnetic Insulator

〇Hiroto Sakimura^1,2, Akio Asami², Hiroki Hayashi², Ji Shi¹, Kazuya Ando² (1.Tokyo Tech., 2.Keio Univ.)

3:45 PM - 4:00 PM

▼ [20p-E216-9] Control of crystal orientation of non-collinear antiferromagnetic Mn₃Sn thin films prepared by sputtering

〇(M1)Juyoung Yoon¹, Yutaro Takeuchi¹, Ryuichi Itoh¹, Shun Kanai¹, Shunsuke Fukami¹, Hideo Ohno¹ (1.Tohoku Univ.)

4:00 PM - 4:15 PM

[20p-E216-10] Electrical switching of Hall resistance in noncollinear antiferromagnetic antiperovskite nitrides

〇Kento Matsuura¹, Tetsuya Hajiri¹, Sunao Ishino¹, Hidefumi Asano¹ (1.Nagoya Univ.)

4:15 PM - 4:30 PM

▼ [20p-E216-11] Efficient parametric magnon excitation using non-reciprocal spin current generation

〇(DC)Genki Okano¹, Yukio Nozaki^1,2 (1.Keio Univ., 2.Keio CSRN)

4:30 PM - 4:45 PM

▼ [20p-E216-12] Spin wave modulation by inserting periodic metal stripe on the YIG surface

〇(M2)shamim sarker¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Tokyo Univ.)

4:45 PM - 5:00 PM

▼ [20p-E216-13] The theory of skyrmionic diffusion: analysis in terms of the position-velocity correlation

〇Soma Miki^1,2, Yuma Jibiki^1,2, Jaehun Cho^1,3, Eiichi Tamura^1,2, Minori Goto^1,2, Hikaru Nomura^1,2, Yoshishige Suzuki^1,2 (1.Osaka Univ., 2.CSRN, 3.KRISS)

5:00 PM - 5:15 PM

△ [20p-E216-14] Topological Hall Effects and Topological Spin Hall Effects Caused by a Skyrmion

〇(M2)Yuichi Ishida¹, Kenji Kondo¹ (1.Hokkaido Univ.)

5:30 PM - 5:45 PM

▲ [20p-E216-15] Strong spin Seebeck suppression in a nearly compensated ferrimagnet

〇(PC)Rafael Ramos¹, Tomosato Hioki², Takashi Kikkawa^1,2, Yusuke Hashimoto¹, Eiji Saitoh^1,2,3,4,5 (1.AIMR, Tohoku University, 2.IMR, Tohoku University, 3.Center for Spintronics Research Network, Tohoku University, 4.ASRC, JAEA, 5.Department of Applied Physics, University of Tokyo)

5:45 PM - 6:00 PM

▼ [20p-E216-16] Spin Hall Effect measurements in Co₂MnGa based all-metallic lateral spin valves

〇(D)LIVIO LEIVA¹, Simon Granville², Teruya Shinjo¹, Ryo Ohshima¹, Yuichiro Ando¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.VUW)

6:00 PM - 6:15 PM

△ [20p-E216-17] Gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve

〇(D)Soobeom Lee¹, Fabien Rortais¹, Ryo Ohshima¹, Yuichiro Ando¹, Yoshishige Suzuki², Hayato Koike³, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ., 3.TDK Corp.)

6:15 PM - 6:30 PM

▼ [20p-E216-18] Large spin signals of local 3-terminal spin valve effect in n-Si/MgO/Co₂Fe_0.4Mn_0.6Si lateral structured devices at low temperature

〇Takeo Koike¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

6:30 PM - 6:45 PM

▼ [20p-E216-19] Controlling magnetic proximity effect in CoFe₂O₄/Pt by applying voltage on Pt layer

〇Shoto Nodo¹, Takumi Yamamoto¹, Takashi Yanase², Toshihiro Shimada², Taro Nagahama² (1.Hokkaido Univ., CSE., 2.Hokkaido Univ., Eng.)

6:45 PM - 7:00 PM

▼ [20p-E216-20] Giant spin torque diode effect induced by nonlinear spin dynamics in double-MgO magnetic tunnel junctions

〇Minori Goto^1,3, Yuma Yamada¹, Atsushi Shimura², Tsuyoshi Suzuki², Naomichi Degawa², Takekazu Yamane², Susumu Aoki², Junichiro Urabe², Shinji Hara², Yoshishige Suzuki^1,3 (1.Osaka Univ., 2.TDK Corp., 3.Osaka Univ. CSRN)

Oral presentation

[21a-E216-1~4] 10.2 Fundamental and exploratory device technologies for spin

Sat. Sep 21, 2019 9:00 AM - 10:00 AM E216 (E216)

Yuichiro Ando(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [21a-E216-1] Influence of FeCo termination layer insertion on voltage-controlled magnetic anisotropy effect in the Ir-doped Fe/MgO junction

〇Takayuki Nozaki¹, Masaki Endo², Tatsuya Yamamoto¹, Tomohiro Nozaki¹, Makoto Konoto¹, Hiroyuki Ohmori², Yutaka Higo², Hitoshi Kubota¹, Akio Fukushima¹, Masanori Hosomi², Yoshishige Suzuki^1,3, Shinji Yuasa¹ (1.AIST, 2.Sony Semiconductor Solutions Corp., 3.Osaka Univ.)

9:15 AM - 9:30 AM

▼ [21a-E216-2] Improved accuracy of voltage-torque-driven magnetization switching using microwave-superimposed voltage pulse

〇Tatsuya Yamamoto¹, Takayuki Nozaki¹, Hiroshi Imamura¹, Shingo Tamaru¹, Kay Yakushiji¹, Hitoshi Kubota¹, Akio Fukushima¹, Yoshishige Suzuki^1,2, Shinji Yuasa¹ (1.AIST, 2.Osaka Univ.)

9:30 AM - 9:45 AM

[21a-E216-3] Voltage tuning of switching probability in voltage-controlled switching

〇Akio Fukushima¹, Tatsuya Yamamoto¹, Takayuki Nozaki¹, Kay Yakushiji¹, Hitoshi Kubota¹, Shinji Yuasa¹ (1.AIST, Spintronics Research Center)

9:45 AM - 10:00 AM

▼ [21a-E216-4] Control of perpendicular magnetic anisotropy of Co films formed on a flexible substrate by applying a biaxial tensile strain

〇Hiroki Matsumoto^1,2, Shinya Ota^1,2, Tomohiro Koyama^2,3, Daichi Chiba^2,3 (1.Univ. of Tokyo, 2.ISIR, Osaka Univ., 3.CSRN, Osaka Univ.)

Sessions

10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[20p-E216-8~20] 10.2 Fundamental and exploratory device technologies for spin

▼ [20p-E216-8] Intrinsic Spin Decay Length in Antiferromagnetic Insulator

▼ [20p-E216-9] Control of crystal orientation of non-collinear antiferromagnetic Mn₃Sn thin films prepared by sputtering

[20p-E216-10] Electrical switching of Hall resistance in noncollinear antiferromagnetic antiperovskite nitrides

▼ [20p-E216-11] Efficient parametric magnon excitation using non-reciprocal spin current generation

▼ [20p-E216-12] Spin wave modulation by inserting periodic metal stripe on the YIG surface

▼ [20p-E216-13] The theory of skyrmionic diffusion: analysis in terms of the position-velocity correlation

△ [20p-E216-14] Topological Hall Effects and Topological Spin Hall Effects Caused by a Skyrmion

▲ [20p-E216-15] Strong spin Seebeck suppression in a nearly compensated ferrimagnet

▼ [20p-E216-16] Spin Hall Effect measurements in Co₂MnGa based all-metallic lateral spin valves

△ [20p-E216-17] Gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve

▼ [20p-E216-18] Large spin signals of local 3-terminal spin valve effect in n-Si/MgO/Co₂Fe_0.4Mn_0.6Si lateral structured devices at low temperature

▼ [20p-E216-19] Controlling magnetic proximity effect in CoFe₂O₄/Pt by applying voltage on Pt layer

▼ [20p-E216-20] Giant spin torque diode effect induced by nonlinear spin dynamics in double-MgO magnetic tunnel junctions

[21a-E216-1~4] 10.2 Fundamental and exploratory device technologies for spin

▲ [21a-E216-1] Influence of FeCo termination layer insertion on voltage-controlled magnetic anisotropy effect in the Ir-doped Fe/MgO junction

▼ [21a-E216-2] Improved accuracy of voltage-torque-driven magnetization switching using microwave-superimposed voltage pulse

[21a-E216-3] Voltage tuning of switching probability in voltage-controlled switching

▼ [21a-E216-4] Control of perpendicular magnetic anisotropy of Co films formed on a flexible substrate by applying a biaxial tensile strain

Authentication

Sessions

10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[20p-E216-8~20] 10.2 Fundamental and exploratory device technologies for spin

▼ [20p-E216-8] Intrinsic Spin Decay Length in Antiferromagnetic Insulator

▼ [20p-E216-9] Control of crystal orientation of non-collinear antiferromagnetic Mn3Sn thin films prepared by sputtering

[20p-E216-10] Electrical switching of Hall resistance in noncollinear antiferromagnetic antiperovskite nitrides

▼ [20p-E216-11] Efficient parametric magnon excitation using non-reciprocal spin current generation

▼ [20p-E216-12] Spin wave modulation by inserting periodic metal stripe on the YIG surface

▼ [20p-E216-13] The theory of skyrmionic diffusion: analysis in terms of the position-velocity correlation

△ [20p-E216-14] Topological Hall Effects and Topological Spin Hall Effects Caused by a Skyrmion

▲ [20p-E216-15] Strong spin Seebeck suppression in a nearly compensated ferrimagnet

▼ [20p-E216-16] Spin Hall Effect measurements in Co2MnGa based all-metallic lateral spin valves

△ [20p-E216-17] Gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve

▼ [20p-E216-18] Large spin signals of local 3-terminal spin valve effect in n-Si/MgO/Co2Fe0.4Mn0.6Si lateral structured devices at low temperature

▼ [20p-E216-19] Controlling magnetic proximity effect in CoFe2O4/Pt by applying voltage on Pt layer

▼ [20p-E216-20] Giant spin torque diode effect induced by nonlinear spin dynamics in double-MgO magnetic tunnel junctions

[21a-E216-1~4] 10.2 Fundamental and exploratory device technologies for spin

▲ [21a-E216-1] Influence of FeCo termination layer insertion on voltage-controlled magnetic anisotropy effect in the Ir-doped Fe/MgO junction

▼ [21a-E216-2] Improved accuracy of voltage-torque-driven magnetization switching using microwave-superimposed voltage pulse

[21a-E216-3] Voltage tuning of switching probability in voltage-controlled switching

▼ [21a-E216-4] Control of perpendicular magnetic anisotropy of Co films formed on a flexible substrate by applying a biaxial tensile strain

Authentication

▼ [20p-E216-9] Control of crystal orientation of non-collinear antiferromagnetic Mn₃Sn thin films prepared by sputtering

▼ [20p-E216-16] Spin Hall Effect measurements in Co₂MnGa based all-metallic lateral spin valves

▼ [20p-E216-18] Large spin signals of local 3-terminal spin valve effect in n-Si/MgO/Co₂Fe_0.4Mn_0.6Si lateral structured devices at low temperature

▼ [20p-E216-19] Controlling magnetic proximity effect in CoFe₂O₄/Pt by applying voltage on Pt layer