Oral presentation

[18a-E206-1~6] 15.2 II-VI and related compounds

Wed. Sep 18, 2019 9:00 AM - 10:30 AM E206 (E206)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-E206-1] Growth of ZnSe thin films on GaAs(110) by using molecular beam epitaxy

〇Kohei Fukuyama¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga Univ.)

9:15 AM - 9:30 AM

[18a-E206-2] The Growth of ZnTe thin films on S- and r-plane nano-facetted Sapphire Substrates

〇Taizo Nakasu¹, Masakazu Kobayashi^2,3, Toshiaki Asahi⁴ (1.IMRAM-Tohoku Univ., 2.Waseda Univ., 3.Waseda Univ. Lab. for Mat. Sci. & Tech., 4.JX Nippon Mining & Metals Corp.)

9:30 AM - 9:45 AM

[18a-E206-3] Theoretical analysis of p-side hole conduction characteristics in II-VI compound semiconductor optical devices on InP substrates

〇Hodaka Kobayashi¹, Keiji Maeda¹, Ichirou Nomura¹ (1.Sophia Univ.)

9:45 AM - 10:00 AM

[18a-E206-4] Characteristic analysis of MgSe/ZnCdSe resonant tunneling diodes on InP substrates

〇Keiji Maeda¹, Ichirou Nomura¹, Takumi Sakai¹ (1.Sophia Univ.)

10:00 AM - 10:15 AM

[18a-E206-5] Synthesis of novel nitride semiconductors of MgSnN₂ and CaSnN₂ via high-pressure route

〇Fumio Kawamura¹, Masataka Imura¹, Naoomi Yamada², Hidenobu Murata³, Takashi Taniguchi¹ (1.NIMS, 2.Chubu Univ., 3.Osaka pref. Univ.)

10:15 AM - 10:30 AM

△ [18a-E206-6] Growth and properties of a novel ternary nitride semiconductor Mg-Sn-N

〇Kenta Matsuura¹, Fumio Kawamura², Masataka Imura², Hidenobu Murata³, Takashi Taniguchi², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS, 3.Osaka Pnef Univ.)

Poster presentation

[18p-PB3-1~2] 15.2 II-VI and related compounds

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB3 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[18p-PB3-1] Initial Growth Mechanism of (ZnO)_1-x(InN)_x Using the First Principles Calculation

〇(M2)Ryota Furuki¹, Masato Oda¹, Yuzo Shinozuka¹ (1.Wakayama Univ.)

4:00 PM - 6:00 PM

[18p-PB3-2] Growth of Ag-doped ZnS layer by sputter epitaxy method

〇Yuta Doi¹, A-i Mizuno¹, Ki Ando¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[18a-E206-1~6] 15.2 II-VI and related compounds

[18a-E206-1] Growth of ZnSe thin films on GaAs(110) by using molecular beam epitaxy

[18a-E206-2] The Growth of ZnTe thin films on S- and r-plane nano-facetted Sapphire Substrates

[18a-E206-3] Theoretical analysis of p-side hole conduction characteristics in II-VI compound semiconductor optical devices on InP substrates

[18a-E206-4] Characteristic analysis of MgSe/ZnCdSe resonant tunneling diodes on InP substrates

[18a-E206-5] Synthesis of novel nitride semiconductors of MgSnN₂ and CaSnN₂ via high-pressure route

△ [18a-E206-6] Growth and properties of a novel ternary nitride semiconductor Mg-Sn-N

[18p-PB3-1~2] 15.2 II-VI and related compounds

[18p-PB3-1] Initial Growth Mechanism of (ZnO)_1-x(InN)_x Using the First Principles Calculation

[18p-PB3-2] Growth of Ag-doped ZnS layer by sputter epitaxy method

Authentication

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[18a-E206-1~6] 15.2 II-VI and related compounds

[18a-E206-1] Growth of ZnSe thin films on GaAs(110) by using molecular beam epitaxy

[18a-E206-2] The Growth of ZnTe thin films on S- and r-plane nano-facetted Sapphire Substrates

[18a-E206-3] Theoretical analysis of p-side hole conduction characteristics in II-VI compound semiconductor optical devices on InP substrates

[18a-E206-4] Characteristic analysis of MgSe/ZnCdSe resonant tunneling diodes on InP substrates

[18a-E206-5] Synthesis of novel nitride semiconductors of MgSnN2 and CaSnN2 via high-pressure route

△ [18a-E206-6] Growth and properties of a novel ternary nitride semiconductor Mg-Sn-N

[18p-PB3-1~2] 15.2 II-VI and related compounds

[18p-PB3-1] Initial Growth Mechanism of (ZnO)1-x(InN)x Using the First Principles Calculation

[18p-PB3-2] Growth of Ag-doped ZnS layer by sputter epitaxy method

Authentication

[18a-E206-5] Synthesis of novel nitride semiconductors of MgSnN₂ and CaSnN₂ via high-pressure route

[18p-PB3-1] Initial Growth Mechanism of (ZnO)_1-x(InN)_x Using the First Principles Calculation