[18a-B11-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[18a-B11-1] Critical role of thermal runaway in VO₂ voltage-induced metal-insulator transition

〇Takeaki Yajima^1,2, Tomonori Nishimura¹, Takahisa Tanaka¹, Ken Uchida¹, Akira Toriumi¹ (1.Univ. of Tokyo, 2.JST PRESTO)

Keywords:Joule heat, volatile resistance switching

In the voltage-induced metal-insulator transition in VO₂, the critical current is approximately constant as a function of the environmental temperature while the critical voltage is strongly varied. This constant critical current can be exploited for the thermally stable application of VO₂ even around the transition temperature. In this research, we elucidate the origin of the constant critical current is, not the metal-insulator transition itself, but rather the thermal runaway due to the Joule heat.