[18a-B31-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18a-B31-7] Biexciton luminescence from individual isoelectronic traps in N -doped GaAs grown on (111) substrates

〇Shouhei Takaoka¹, Kengo Takamiya¹, Shuhei Yagi¹, Yuji Hazama², Hidefumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.ISSP,Tokyo Univ.)

Keywords:isoelectronic traps, biexciton luminescence

The use of biexcitons in semiconductors has been considered to generate quantum entangled photon pairs that play an important role in the field of quantum information technology. We are studying focusing on biogenic light emission from a single isoelectronic trap formed by doping nitrogen into GaAs. Here we report the observation of biexciton emission from a single isoelectronic trap in nitrogen δ-doped GaAs grown on a (111) substrates.