As flux dependence of GaAsBi / GaAs quantum wells on (100) GaAs substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2019 9:00 AM - 11:30 AM B31 (B31)

Hiroyuki Yaguchi(Saitama Univ.), Yoriko Tominaga(Hiroshima Univ.)

11:00 AM - 11:15 AM

〇Takumi Yamamoto¹, Patil Pallavi¹, Satoshi Shimomura¹ (1.Ehime Univ.)

Keywords:PL characteristics, GaAsBi/GaAs