High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (15) Annealing behavior of NO shallow thermal donors

Naohisa Inoue; Shuichi Okuda; Shuichi Kawamata

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Naoki Fukata(NIMS), Kazuhisa Torigoe(SUMCO), Wataru Sugimura(SUMCO Corporation)

9:15 AM - 9:30 AM

[18a-C212-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (15) Annealing behavior of NO shallow thermal donors

〇Naohisa Inoue^1,2, Shuichi Okuda², Shuichi Kawamata² (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

Keywords:silicon crystal, nitrogen-oxygen complex, infrared absorption

Local vibration modes from NO pairs (shallow thermal donors) in CZ silicon were measured. From the detailed temperature dependence analysis, previous identification was confirmed; 973 and 1002 cm^-1 peaks assigned to O(NO)O, 855 and 1064 cm^-1 peaks to O(NO), 736 cm^-1 peak to (NO)O, and 769 and 946 cm^-1 peaks to NO.