[18a-C310-1~10] 6.6 Probe Microscopy

△ [18a-C310-10] Photoresponse measurement of monolayer WSe₂/MoSe₂ in-plane heterostructure by a photo excited multiprobe technique

〇Hiroyuki Mogi¹, Zi-han Wang¹, Takafumi Bamba¹, Yuhei Takaguchi², Takahiko Endo², Shoji Yoshida¹, Atsushi Taninaka¹, Haruhiro Oigawa¹, Yasumitsu Miyata², Osamu Takeuchi¹, Hidemi Shigekawa¹ (1.Univ. of Tsukuba, 2.Tokyo metro univ.)

Keywords:Transition metal dicalcogenides, Multiprobe technique, Photocarrier dynamics

In recent years, transition metal dichalcogenides (TMDC) family such as MoS₂ and WSe₂ has attracted much attention due to their remarkable optoelectronic properties. For the first time in the world, we succeed to combine multiprobe techniques with femto-second pulsed laser system. By using the multiprobe optical method, we measured WSe2/MoSe2 in-plane heterostructure on SiO2/Si substrate. As a result, we evaluated the band structure including the schottkey barrier of probe-sample interface and band shift on MoSe₂/WSe₂ interface and positional dependence of carrier dynamics. This technique is expected to play an important role in the researches to develop advanced functional devices with microscopic structures.