Characteristic analysis of MgSe/ZnCdSe resonant tunneling diodes on InP substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

Wed. Sep 18, 2019 9:00 AM - 10:30 AM E206 (E206)

Kazuyuki Uno(Wakayama Univ.)

9:45 AM - 10:00 AM

〇Keiji Maeda¹, Ichirou Nomura¹, Takumi Sakai¹ (1.Sophia Univ.)

Keywords:resonant dunneling diode, II-VI semiconductor, MBE