Growth and properties of a novel ternary nitride semiconductor Mg-Sn-N

Presentation information

Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

Wed. Sep 18, 2019 9:00 AM - 10:30 AM E206 (E206)

Kazuyuki Uno(Wakayama Univ.)

10:15 AM - 10:30 AM

〇Kenta Matsuura¹, Fumio Kawamura², Masataka Imura², Hidenobu Murata³, Takashi Taniguchi², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS, 3.Osaka Pnef Univ.)

Keywords:ternary nitride semiconductor, MgSnN2, rocksalt type structure