[18a-E310-1~10] 15.4 III-V-group nitride crystals

[18a-E310-1] Analysis of sub peak emission of UVB light emitting diodes including guide layers

〇(D)Kosuke Sato^1,2, Shinji Yasue², Yuya Ogino², Shunya Tanaka², Motoaki Iwaya², Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki^2,3 (1.Asahi-Kasei, 2.Meijo University, 3.Nagoya University)

Keywords:nitride, laser, diode

Last year, our group reported the maximum current density at 41.2 kA/cm² with UVB light emitting diodes including guide layers. This performance was obtained by designing and optimizing p-AlGaN cladding layer. However, the emission spectrum have double peak at well emission (300 nm) and sub peak emission (275 nm), which indicated that the carrier injection efficiency into the wells were not high. In this presantation, the mechanism of the origin of sub peak emission was clarified by investigating the film structure. The optical properties of the devices will be also discussed.