[18a-E310-1~10] 15.4 III-V-group nitride crystals

[18a-E310-5] [Young Scientist Presentation Award Speech] Improvement of quality in AlGaN underlying layer by growth mode control and its application to UV-B laser

〇Yuta Kawase¹, Junnya Ikeda¹, Yusuke Sakuragi¹, Shinji Yasue¹, Shohei Teramura¹, Shunnya tanaka¹, Yuya Ogino¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Sho Iwayama^1,3, Isamu Akasaki^1,2, Hideto Miyake³ (1.Department of Materials Science and Engineering, Meijo University, Nagoya, Japan, 2.Akasaki Research Center, Nagoya University, Nagoya, Japan, 3.Graduate School of Regional Innovation Studies, Mie University, Tsu, Japan)

Keywords:AlGaN, laser

In this report, AlGaN with a thickness of about 60% of AlN mole was deposited on a high-temperature-treated sputter AlN film with different surface flatness. As a result, there was a difference in the growth mode.
It was also confirmed that the difference in the growth mode of AlGaN was influenced by the crystallinity of the underlying AlN layer.
The active layer was stacked on the AlGaN and the laser characteristics were investigated by photo-excitation method.
The threshold excitation power density of the samples using three-dimensionally grown AlGaN was about 1/6 lower than that of the samples using the two-dimensional grown AlGaN, and decreased to 36 kW / cm2.