[18a-E310-1~10] 15.4 III-V-group nitride crystals

[18a-E310-9] Fabrication of UVC AlGaN LEDs on DC-sputter-based AlN templates

〇Yosuke Mogami^1,2, Atsushi Osawa³, Kazuto Ozaki³, Yukitake Tanioka³, Atsushi Maeoka³, Yuri Itokazu^1,2, Shunsuke Kuwaba^1,2, Jo Masafumi¹, Noritoshi Maeda¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ., 3.SCREEN)

Keywords:UV-LED, sputter, annealing

AlGaN-based deep-UV light-emitting diodes are applicable to various fields such as disinfection, water/air purification and bio-medical. We are advancing research to realize low-cost, high-quality AlGaN deep ultraviolet LED by combining DC sputtering and high temperature annealing with excellent productivity. So far, we have investigated uniform sputtered AlN deposition conditions, and reported LED operation with an external quantum efficiency of 0.82% at 290 nm. In this time, we have optimized the growth conditions of LED and fabricated an LED with an efficiency of 1.3% at an emission wavelength of 270 nm.