[18a-PA5-1~8] 3.15 Silicon photonics

▲ [18a-PA5-5] Realization of coupled-resonator-induced-transparency effect in germanium-on-insulator photonics

〇(P)ChongPei HO¹, Ziqiang ZHAO¹, Qiang LI¹, Shinichi TAKAGI¹, Mitsuru TAKENAKA¹ (1.Univ. Tokyo)

Keywords:Germanium, Mid-infrared

Germanium (Ge) has recently emerged as an ideal optical material for the extension of operating wavelengths from near-infrared to mid-infrared (MIR) range due to its inherent beneficial properties. In particular, Ge possesses broader transmission transparency from 2 to 14 µm, a threefold higher thermo-optic coefficient than silicon (Si), and compatibility with complementary metal-oxide-semiconductor (CMOS) process. In this paper, we demonstrate couple-resonator-induced-transparency (CRIT) on a germanium-on-insulator (GeOI) photonic platform by using two evanescently coupled microring resonators. We observe an anti-crossing behavior and a coupling rate of 1.25 GHz when the resonances of the microring resonators are aligned.