[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-11] Investigation of AlGaN/AlN interface structure and annealing effect for Control of strain relaxation

〇Yuri Itokazu^1,2, Shunsuke Kuwaba^1,2, Masafumi Jo¹, Norihiko Kamata², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ)

Keywords:semiconductor