[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-20] Fabrication of cubic InN nanowires on GaN V-groove structures

〇Yusuke Nishimura¹, Yagi Shuhei¹, Yaguchi Hiroyuki¹ (1.Saitama Univ.)

Keywords:InN, nanowire, Anneal

As an attempt to control structural parameters such as formation density and aspect ratio for cubic InN nanowires, self-assembled nanowires were fabricated using the regular V-groove structure formed on the GaN film surface. The V-groove structure was fabricated by high temperature annealing at 1000 ° C., and then InN was deposited 2.4 nm. As a result, it was confirmed that wire-like InN was selectively grown along the groove of the V-groove structure. The average aspect ratio was about 2.4.