[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-22] Temperature Dependence of the Emission Enhancements for InGaN/GaN MQW

〇Fumiya Murao¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Surface Plasmon, InGaN, LED

Surface plasmon (SP) can increase emission efficiencies of several light-emitting materials such as InGaN/GaN quamtum wells (QWs) and has been studied towards device applications. In this study, we masured the temperature dependence of the emission enhancement of InGaN/GaN multiple QWs and investigated the mechanism of the SP enhancements in multiple QWs which have not so far been clarified in detail.