[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-23] Surface and Bulk Electronic Structures of InGaN

〇Masataka Imura¹, Shunsuke Tsuda¹, Takahiro Nagata¹, Yoshiyuki Yamashita^1,2, Hideki Yoshikawa^1,2, Keisuke Kobayashi², Yasuo Koide¹, Yuichi Ota³, Hidenobu Murata⁴, Tomohiro Yamaguchi⁵, Masamitsu Kaneko⁶, Tsutomu Araki⁶, Yasushi Nanishi⁶ (1.NIMS, 2.SPring-8 NIMS, 3.TIRI, 4.Osaka Pref. Univ., 5.Kogakuin Univ., 6.Ritsumeikan Univ.)

Keywords:semiconductor, InGaN, XPS

The electronic structures of InGaN have been evaluated by SX-PES and first principle calculation. However, their electronic structures are different between surface and bulk regions. Therefore, the intrinsic bulk electronic structures of InGaN has not yet been investigated well. In this study, the surface-bulk electronic structures of InGaN have been systematically evaluated by bulk sensitive HX-PES and first principle calculation.